IPW60R250CP coolmos tm power transistor features ? lowest figure-of-merit r on xq g ? ultra low gate charge ? extreme dv/dt rated ? high peak current capability ? qualified according to jedec 1) for target applications ? pb-free lead plating; rohs compliant coolmos cp is designed for: hard switching smps topologies maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 2) i d,pulse t c =25 c avalanche energy, single pulse e as i d =5.2 a, v dd =50 v 345 mj avalanche energy, repetitive t ar 2),3) e ar i d =5.2 a, v dd =50 v avalanche current, repetitive t ar 2),3) i ar a mosfet d v /d t ruggedness d v /d t v ds =0...480 v v/ns gate source voltage v gs static v ac ( f >1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c mounting torque m3 and m3.5 screws 60 ncm 30 104 -55 ... 150 0.52 5.2 50 20 value 12 8 40 v ds @ t j,max 650 v r ds(on),max @ t j = 25c 0.250 ? q g,typ 26 nc product summary type package marking IPW60R250CP pg-to247 6r250p pg-to247 rev. 2.2 page 1 2009-04-01 please note the new package dimensions arccording to pcn 2009-134-a
IPW60R250CP maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous diode forward current i s a diode pulse current 2) i s,pulse 40 reverse diode d v /d t 4) d v /d t 15 v/ns parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.2 k/w r thja leaded - - 62 soldering temperature, wavesoldering only allowed at leads t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v gate threshold voltage v gs(th) v ds = v gs , i d =0,44 ma 2.5 3 3.5 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c --1a v ds =600 v, v gs =0 v, t j =150 c -10- gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =7.8 a, t j =25 c - 0.22 0.25 ? v gs =10 v, i d =7.8 a, t j =150 c - 0.59 - gate resistance r g f =1 mhz, open drain - 1.3 - ? value t c =25 c 7.8 values thermal resistance, junction - ambient rev. 2.2 page 2 2009-04-01 please note the new package dimensions arccording to pcn 2009-134-a
IPW60R250CP parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 1200 - pf output capacitance c oss -54- effective output capacitance, energy related 5) c o(er) -55- effective output capacitance, time related 6) c o(tr) - 150 - turn-on delay time t d(on) -40-ns rise time t r -17- turn-off delay time t d(off) - 110 - fall time t f -12- gate charge characteristics gate to source charge q gs -6-nc gate to drain charge q gd -9- gate charge total q g -2635 gate plateau voltage v plateau - 5.0 - v reverse diode diode forward voltage v sd v gs =0 v, i f =7.8 a, t j =25 c - 0.9 1.2 v reverse recovery time t rr - 330 - ns reverse recovery charge q rr - 4.5 - c peak reverse recovery current i rrm -27-a 1) j-std20 and jesd22 2) pulse width t p limited by t j,max 4) i sd i d , di/dt 200a/s, v dclink =400v, v peak |